| PART |
Description |
Maker |
| AS7C33128PFS32A AS7C33128PFS32A-100TQC AS7C33128PF |
3.3V 128K X 32/36 pipeline burst synchronous SRAM 128K X 36 STANDARD SRAM, 10 ns, PQFP100
3.3V 128K X 32/36 pipeline burst synchronous SRAM 128K X 32 STANDARD SRAM, 9 ns, PQFP100
LM4040 Precision Micropower Shunt Voltage Reference; Package: SOT-23; No of Pins: 3; Qty per Container: 3000; Container: Reel 128K X 32 STANDARD SRAM, 8.5 ns, PQFP100
3.3V 128K X 32/36 pipeline burst synchronous SRAM 128K X 36 STANDARD SRAM, 9 ns, PQFP100
3.3V 128K X 32/36 pipeline burst synchronous SRAM 128K X 32 STANDARD SRAM, 10 ns, PQFP100
LM4040 Precision Micropower Shunt Voltage Reference; Package: SOT-23; No of Pins: 3; Qty per Container: 1000; Container: Reel 128K X 36 STANDARD SRAM, 8.5 ns, PQFP100
3.3V 128K X 32/36 pipeline burst synchronous SRAM 128K X 32 STANDARD SRAM, 12 ns, PQFP100
DIODE ZENER SINGLE 1000mW 18Vz 14mA-Izt 0.05 5uA-Ir 13.7Vr DO41-GLASS 5K/REEL
DIODE ZENER SINGLE 1000mW 18Vz 14mA-Izt 0.05 5uA-Ir 13.7Vr DO41-GLASS 5K/AMMO
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| IS61NP12832 IS61NP25618 IS61NLP12832-5B IS61NP1283 |
PIPELINE NO WAIT STATE BUS SRAM 256K X 18 ZBT SRAM, 5 ns, PQFP100
PIPELINE NO WAIT STATE BUS SRAM 128K X 32 ZBT SRAM, 5 ns, PBGA119
PIPELINE NO WAIT STATE BUS SRAM 128K X 36 ZBT SRAM, 4.2 ns, PQFP100
PIPELINE NO WAIT STATE BUS SRAM 管道编号WAIT状态总线的SRAM
PIPELINE NO WAIT STATE BUS SRAM 128K X 36 ZBT SRAM, 3.8 ns, PBGA119
PIPELINE NO WAIT STATE BUS SRAM 256K X 18 ZBT SRAM, 4.2 ns, PBGA119
PIPELINE NO WAIT STATE BUS SRAM 128K X 36 ZBT SRAM, 4.2 ns, PBGA119
PIPELINE NO WAIT STATE BUS SRAM 128K X 32 ZBT SRAM, 5 ns, PQFP100
PIPELINE NO WAIT STATE BUS SRAM 256K X 18 ZBT SRAM, 3.8 ns, PBGA119
PIPELINE NO WAIT STATE BUS SRAM 128K X 36 ZBT SRAM, 5 ns, PBGA119
PIPELINE NO WAIT STATE BUS SRAM 128K X 32 ZBT SRAM, 4.2 ns, PBGA119
PIPELINE NO WAIT STATE BUS SRAM 128K X 32 ZBT SRAM, 4.2 ns, PQFP100
PIPELINE NO WAIT STATE BUS SRAM 256K X 18 ZBT SRAM, 5 ns, PBGA119
PIPELINE NO WAIT STATE BUS SRAM 128K X 32 ZBT SRAM, 3.8 ns, PQFP100
PIPELINE NO WAIT STATE BUS SRAM 128K X 32 ZBT SRAM, 3.8 ns, PBGA119
|
Integrated Silicon Solu...
Integrated Silicon Solution, Inc.
|
| AS7C33128PFD32B |
(AS7C33128PFD32B / AS7C33128PFD36B) 3.3V 128K X 32/36 pipeline burst synchronous SRAM
|
Alliance Semiconductor Corporation
|
| AS5SP128K32DQ-7.5IT AS5SP128K32DQ-7.5ET AS5SP128K3 |
Plastic Encapsulated Microcircuit 4.0Mb, 128K x 32, Synchronous SRAM Pipeline Burst, Single Cycle Deselect
|
Austin Semiconductor
http://
|
| WED2ZL361MV50BC WED2ZL361MV38BC WED2ZL361MV42BC WE |
1M x 36 Synchronous Pipeline Burst NBL SRAM(1M x 36,5.0ns同步脉冲流水线静态RAM(无总线等待时间 100万36同步管道爆裂NBL的静态存储器00万x 36,5.0纳秒同步脉冲流水线静态随机存储器（无总线等待时间））
1M x 36 Synchronous Pipeline Burst NBL SRAM(1M x 36,3.8ns同步脉冲流水线静态RAM(无总线等待时间 100万36同步管道爆裂NBL的静态存储器00万x 36,3.8纳秒同步脉冲流水线静态随机存储器（无总线等待时间））
1M x 36 Synchronous Pipeline Burst NBL SRAM(1M x 36,4.2ns同步脉冲流水线静态RAM(无总线等待时间 100万36同步管道爆裂NBL的静态存储器00万x 36,4.2纳秒同步脉冲流水线静态随机存储器（无总线等待时间））
1M x 36 Synchronous Pipeline Burst NBL SRAM(1M x 36,3.5ns同步脉冲流水线静态RAM(无总线等待时间 100万36同步管道爆裂NBL的静态存储器00万x 36,3.5纳秒同步脉冲流水线静态随机存储器（无总线等待时间））
|
Vicor, Corp.
|
| LH532000B LH532000BT |
CMOS 2M (256K x 8/128K x 16) MROM 200万的CMOS56 × 8/128K × 16MROM
LH532000BT CMOS 1M (128K x 8) Mask Programmable ROM 48-pin TSOP
|
Sharp, Corp.
Sharp Corporation
Sharp Electrionic Components
Sharp Electronics Corp.
|
| AS7C33256PFS32A AS7C33256PFS36A AS7C33256PFS32A-16 |
3.3V 256K x 32/36 pipeline burst synchronous SRAM
3.3V 256K x 32 pipeline burst synchronous SRAM, clock speed - 166 MHz
|
Alliance Semiconductor
|
| AS7C33512PFS16A |
3.3V 512K x 16/18 pipeline burst synchronous SRAM
3.3V 512K×16 Pipeline Burst Synchronous SRAM(3.3V 512K×16流水线脉冲同步静态RAM) 3.312k × 16管道爆裂同步SRAM的电压（3.3V12k × 16流水线脉冲同步静态内存）
|
Alliance Semiconductor, Corp.
|
| M27C202-80F1 M27C202-70K6 M27C202-120F6 M27C202-90 |
128K X 16 OTPROM, 80 ns, PDSO40
128K X 16 OTPROM, 90 ns, PQCC44
128K X 16 UVPROM, 100 ns, CDIP40
2 MBIT (128KB X16) UV EPROM AND OTP EPROM
|
STMICROELECTRONICS
ST Microelectronics
|
| GS84032T-166 GS84032B-100 GS84032B-166 GS84032B-15 |
128K X 32 CACHE SRAM, 8 ns, PBGA119
4Mb56K x 18Bit) Synchronous Burst SRAM(4M位（256K x 18位）同步静态RAM（带2位脉冲地址计数器）)
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs
|
GSI Technology
|
| 28C010TRTDI-15 28C010TRPFB-15 28C010TRT2DI-12 28C0 |
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DIP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DFP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 150 ns, DIP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 150 ns, DFP32
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 120 ns, DFP32
POT 200K OHM THUMBWHEEL CERM ST 128K X 8 EEPROM 5V, 200 ns, DFP32
150 x 32 pixel format, LED Backlight available 128K X 8 EEPROM 5V, 120 ns, DIP32
Low Profile Power Inductor; Inductor Type:Power; Inductance:1uH; Inductance Tolerance: /- 20 %; Series:HC2LP; Core Material:Ferrite; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes
CONNECTOR ACCESSORY
Film Capacitor; Voltage Rating:400VDC; Capacitor Dielectric Material:Polyester; Capacitance:0.068uF; Capacitance Tolerance: /- 10%; Lead Pitch:15mm; Leaded Process Compatible:No; Package/Case:F; Peak Reflow Compatible (260 C):No RoHS Compliant: No
|
http://
Maxwell Technologies, Inc
|
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